Hydrogen iodide etch of tin oxide

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156646, 156653, 156655, 1566591, 156662, 156667, 156345, 20419232, 204298, 252 791, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

047087668

ABSTRACT:
Disclosed is a method for etching a tin oxide layer (18). The tin oxide layer (18) is masked by selectively forming an etchant-resistant material (20) on it. This material is itself patterned and etched, and then the exposed tin oxide (26) is isotropically etched such that substantially all of the exposed tin oxide (26) is removed. The preferred etchant of the invention comprises a major portion of inert nitrogen gas with a minor portion of hydrogen iodide. A vertical wall reactor (48) is provided for use with the invention in order to achieve a uniform flow and etch rate. In an alternate embodiment, a plasma reactor can be used to perform the etching.

REFERENCES:
patent: 3095341 (1963-06-01), Ligenza
patent: 3366520 (1968-01-01), Berkenblit et al.
patent: 3757733 (1973-09-01), Reinberg
patent: 4140814 (1979-02-01), Hynecek
patent: 4280141 (1981-07-01), McCann et al.
patent: 4292384 (1981-09-01), Straughan et al.
patent: 4336295 (1982-06-01), Smith
patent: 4544444 (1985-10-01), Chang
McCann et al., "Buried-Channel CCD Imaging Arrays with Tin-Oxide Transparent Gates", 1978 IEEE International Solid-State Circuit Conference, Digest of Technical Papers, pp. 30-31.
Brown et al., "Transparent Metal Oxide Electrode CID Imager Array", 1975 IEEE International Solid-State Circuit Conference, Digest of Technical Pages, pp. 34-35.
Brown et al., "Transparent Metal Oxide Electrode CID Imager", IEEE Journal of Solid-State Circuits, vol. SC-11, No. 1, Feb. 1976, pp. 128-132.
Mammana et al., "Plasma Etching of SnO.sub.2 Films on Silicon Substrates", Elsevier Sequoia S.A., Lausanne, printed in the Netherlands, pp. L5-L6.
Baliga et al., "Electrochemical Patterning of Tin Oxide Films", Electrochemical Science and Technology, Jul. 1977, vol. 124, No. 7, pp. 1059-1060.
Bradshaw et al., "Etching Methods for Indium Oxide/Tin Oxide Films", Elsevier Sequoia S.A., Lausanne, printed in Switzerland, pp. L5-L6.
Keenan et al., "A Tin Oxide Transparent-Gate Buried-Channel Virtual-Phase CCD Imager", IEEE Transactions on Electron Devices, vol. Ed 32, No. 8, Aug. 1985, pp. 1531-1533.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Hydrogen iodide etch of tin oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hydrogen iodide etch of tin oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hydrogen iodide etch of tin oxide will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2423163

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.