Hydrogen-based phosphosilicate glass process for gap fill of...

Details Hydrogen-based phosphosilicate glass process for gap fill of... Hydrogen-based phosphosilicate glass process for gap fill of...

2006-02-21

2006-02-21

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S694000, C438S778000, C438S783000, C438S784000, C438S786000

Reexamination Certificate

active

07001854

ABSTRACT:
Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

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