Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-03-08
2005-03-08
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S158000, C438S770000, C438S773000, C438S785000
Reexamination Certificate
active
06864191
ABSTRACT:
The present invention provides a hydrogen barrier layer able to prevent diffusions of hydrogen into a capacitor and a method for fabricating a semiconductor device having the same. The inventive method includes the steps of: depositing a zirconium-titanium oxide layer containing zirconium, titanium and oxygen on a substrate; and performing a reforming process for densifying the zirconium-titanium oxide layer and for stuffing oxygen in a surface of the zirconium-titanium oxide layer.
REFERENCES:
patent: 6090658 (2000-07-01), Joo
patent: 6320213 (2001-11-01), Kirlin et al.
patent: 6429058 (2002-08-01), Colgan et al.
patent: 2001-4362 (2001-01-01), None
patent: WO 0223614 (2002-03-01), None
Berry Renee R.
Piper Rudnick LLP
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