Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-10
2006-01-10
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000, C438S253000, C438S396000
Reexamination Certificate
active
06984857
ABSTRACT:
Semiconductor devices and fabrication methods are presented, in which a hydrogen barrier is provided above a ferroelectric capacitor to prevent degradation of the ferroelectric material during back-end manufacturing processes employing hydrogen. The hydrogen barrier comprises silicon rich silicon oxide or amorphous silicon, which can be used in combination with an aluminum oxide layer to inhibit diffusion of process-related hydrogen into the ferroelectric capacitor layer.
REFERENCES:
patent: 5452178 (1995-09-01), Emesh et al.
patent: 5825068 (1998-10-01), Yang
patent: 5972722 (1999-10-01), Visokay et al.
patent: 6090697 (2000-07-01), Xing et al.
patent: 6144060 (2000-11-01), Park et al.
patent: 6177351 (2001-01-01), Beratan et al.
patent: 6225656 (2001-05-01), Cuchiaro et al.
patent: 6242299 (2001-06-01), Hickert
patent: 6249014 (2001-06-01), Bailey
patent: 6261967 (2001-07-01), Athavale et al.
patent: 6291251 (2001-09-01), Nam
patent: 6423592 (2002-07-01), Sun
patent: 6495413 (2002-12-01), Sun et al.
patent: 6528386 (2003-03-01), Summerfelt et al.
patent: 6534809 (2003-03-01), Moise et al.
patent: 6576482 (2003-06-01), Aggarwal et al.
patent: 6611014 (2003-08-01), Kanaya et al.
patent: 6642100 (2003-11-01), Yang et al.
patent: 6706540 (2004-03-01), Hikosaka et al.
patent: 6781184 (2004-08-01), Solayappan et al.
patent: 2001/0034106 (2001-10-01), Moise et al.
patent: 2001/0044205 (2001-11-01), Gilbert et al.
patent: 2002/0011616 (2002-01-01), Inoue et al.
patent: 2002/0016012 (2002-02-01), Kronke et al.
Notes taken at the International Symposium on Applications of Ferroelectrics Conference in Nara, Japan in May, 2002. The speaker was H. Nagel of Infineon Technologies and Toshiba Corporation, Key Technologies for High Density FeRAM Application, one page.
“Comparison Between HCP CVD and PECVD Silicon Nitride for Advanced Interconnect Applications”, J. Yota, M. Janani, L.E. Camilletti, A. Kar-Roy, Q.Z. Liu, C. Nguyen, M.D. Woo J. Hander, and P. Van Cleemput, IEEE, 2000, pp. 76-78.
“Hydrogen Role on the Properties of Amorphous Silicon Nitride”, F. De Brito Mots, J.F. Justo and A. Fazzio, Journal of Applied Physics, vol. 86, No. 4, Aug. 15, 1999, pp. 1843-1847.
“FeRAM Tutorial”, Ali Sheikholeslami and P. Glenn Gulak, A survey of circuit Innovations in Ferroelectric random-access memories, Proceedings of the IEEE, vol. 88, No. 3, May, 2000, 3 pages, taken from the Internet at: http://www.eecg.toronto.edu/-ali/ferro/tutorial.html.
“A survey of Circuit Innovations in Ferroelectric Random Access Memories”, Ali Sheikholeslami and P. Glenn Gulak, Proceedings of the IEEE, vol. 88, No. 5, May, 2000, pp. 667-689.
“Generic CVD Reactor”, CVD Basics, Daniel M. Dobkin, Dec. 7, 2001, 3 pages, taken from the Internet at: http://www.batn_t.com/_nigmatics/semiconductor_processing/CVD_Fundamentals/introdu . . . .
“Physical Vapor Deposition”, Cougar Labs, Inc., Dec. 7, 2001, 9 pages, taken from the Internet at: http://www.cougarlabs.com/pvd1.html.
“The Hydrogen Content of Plasma-Deposited silicon Nitrid”, W. A. Lanford and M. J. Rand, American Institute of Physics J. Appl. Phys. 49(4), Apr., 1978, pp. 2473-2477.
“Free Energy Model for the Analysis of Bonding in α-SixNyHzAlloys”, Z. Yin and W. Smith, J. Vac. Sci. Technol. A. vol. 9, No. 3, MayJun., 1991, p. 972.
Aggarwal Sanjeev
Albrecht Martin G.
Large Jeff L.
Moise, IV Theodore S.
Summerfelt Scott R.
Brady III W. James
Crane Sara
Garner Jacqueline J.
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