Metal treatment – Compositions – Heat treating
Patent
1977-10-11
1979-04-24
Andrews, M. J.
Metal treatment
Compositions
Heat treating
357 52, H01I 754
Patent
active
041510070
ABSTRACT:
Variations in threshold voltage of Metal-Oxide-Silicon (MOS) structures are attenuated by the inclusion in the fabrication process of a hydrogen anneal step using a temperature range of 650 degrees C.ltoreq.T.ltoreq.950 degrees C. This anneal step is designed to be the last step in the fabrication process which is performed at temperatures above 600 degrees C.
REFERENCES:
patent: 3852120 (1974-12-01), Johnson et al.
Hofstein; S. R., Solid State Electronics, vol. 10, pp. 657-670, 1967, Pergamon Press.
Levinstein Hyman J.
Sinha Ashok K.
Andrews M. J.
Bell Telephone Laboratories Incorporated
Ostroff Irwin
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