Metal treatment – Compositions – Heat treating
Patent
1977-03-23
1979-04-24
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
219121L, 250492A, 357 91, H01L 2126
Patent
active
041510089
ABSTRACT:
A pulsed laser or flash lamp produces a short duration pulse of light for thermal processing of selected regions of a semiconductor device. The light pulse is directed towards the semiconductor device and irradiates selected surface regions of the device to be processed. Energy deposited by the light pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the light pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature and the remaining mass of the semiconductor device is not subjected to unnecessary or undesirable high temperature exposure.
REFERENCES:
patent: 3420719 (1969-01-01), Potts
patent: 3461547 (1969-08-01), Di Curcio
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 3940289 (1976-02-01), Marqwardt et al.
patent: 4059461 (1977-11-01), Fan et al.
Kachurin et al., "Annealing . . . Defects by Laser . . . Pulses", Sov. Phys. Semicond. 9 (1976) 946.
Shtyrkov et al., "Local Laser Annealing . . . S/C Layers", Sov. Phys. Semicond. 9 (1976) 1309.
Antonenko et al., ". . . Implanted Impurity in Si . . . Laser Annealing", Sov. Phys. Semicond. 10 (1976) 81.
Kutukova et al., "Laser Annealing of . . . Si", Sov. Phys. Semicond. 10 (1976) 265.
Bolotov et al., "Laser Annealing . . . Ion-irradiated GaAs", Sov. Phys. Semicond. 10 (1976) 338.
Kachurin et al., "Annealing of Implanted Layers by . . . Laser . . . ", Sov. Phys. Semicond. 10 (1976) 1128.
Klimenko et al., ". . . Argon Laser . . . Ion-Implanted -Amorphised Si . . . ", Sov. J. Quant. Electron. 5 (1976) 1289.
Kistemaker (Report), Round Trip in the USSR, Sep. 1977.
M. L. Joshi, "Inducing Impurity Migration in Semiconductors by Lasers", IBM TDB, vol. 11, (1968) p. 104.
Y. Matsuoka et al., "Normal Laser Damage of Si Solar Cells . . . ", Appl. Phys. Lett. 25 (1974) 574.
R. J. Von Gutfeld, ". . . Crystallization . . . Optical Pulses on Te-Based Memory Materials", Appl. Phys. Lett. 22 (1973) 257.
Roy Upendra
Rutledge L. Dewayne
Spire Corporation
LandOfFree
Method involving pulsed light processing of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method involving pulsed light processing of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method involving pulsed light processing of semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1989656