Hydrocarbon gases for anisotropic etching of metal-containing la

Details Hydrocarbon gases for anisotropic etching of metal-containing la Hydrocarbon gases for anisotropic etching of metal-containing la

1998-08-07

2000-01-04

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438719, 252 791, 252 794, H01L 21306

Patent

active

060109661

ABSTRACT:
A process for anisotropically etching a metal-containing layer 15 on a substrate 10 is described. The etching process uses an energized process gas of a comprising halogen-containing etchant gas for etching the metal-containing layer to form volatile metal compounds, and hydrocarbon inhibitor gas having a carbon-to-hydrogen ratio of from about 1:1 to about 1:3, to deposit inhibitor on etched metal features and provide anisotropic etching. More preferably, the hydrocarbon inhibitor gas comprises a high carbon-to-hydrogen ratio of from about 1:1 to 1:2.

REFERENCES:
patent: 3943042 (1976-03-01), Cook, Jr.
patent: 4126523 (1978-11-01), Wong
patent: 4618398 (1986-10-01), Nawata et al.
patent: 4666555 (1987-05-01), Tsang
patent: 4729815 (1988-03-01), Leung
patent: 4915777 (1990-04-01), Jucha et al.
patent: 4997520 (1991-03-01), Jucha et al.
patent: 5110408 (1992-05-01), Fujii et al.
patent: 5350484 (1994-09-01), Gardner et al.
patent: 5597444 (1997-01-01), Gilton

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