Hybrid write mechanism for high speed and high density...

Details Hybrid write mechanism for high speed and high density... Hybrid write mechanism for high speed and high density...

2006-02-28

2006-02-28

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S171000

Reexamination Certificate

active

07006375

ABSTRACT:
A method of writing to a magnetic random access memory comprising: producing a magnetic field along a magnetically hard axis of a free layer of a magnetoresistive element; and passing current through the magnetoresistive element to change a direction of magnetization of the free layer by spin momentum transfer. A magnetic random access memory that operates in accordance with the method is also included.

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