Hybrid transistor

Details Hybrid transistor Hybrid transistor

1978-05-12

1980-07-15

James, Andrew J.

Wave transmission lines and networks

Automatically controlled systems

With control of equalizer and/or delay network

357 80, 357 81, 333247, H01L 2302, H01L 2312, H01L 3902

Patent

active

042131413

ABSTRACT:
A semiconductor device which provides in an input circuit a substantially low reactance and a relatively high resistance within a range of operating frequencies to improve the impedance match between the device and an energy source. The device has a semiconductor die with at least a first and a second bonding terminal having capacitance and resistance between the bonding terminals. At least a first bond lead electrically connects the first bonding terminal to a first metallic contact area. Means connects at least a second bond lead between the second bonding terminal and a second metallic contact area. At least a third bond lead electrically connects the first bonding terminal to the second metallic contact area to form an inductance to interact with the capacitance of the semiconductor die within the operating range of frequencies thereby to increase the input impedance.

REFERENCES:
patent: 3387190 (1968-06-01), Winkler
patent: 3486082 (1969-12-01), Sakamoto
patent: 3713006 (1973-01-01), Litty et al.
patent: 3958195 (1976-05-01), Johnson
patent: 4107728 (1978-08-01), Max

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