Hybrid semiconductor—magnetic spin based memory with...

Details Hybrid semiconductor—magnetic spin based memory with... Hybrid semiconductor—magnetic spin based memory with...

2005-12-13

2005-12-13

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S145000, C365S171000, C365S173000

Reexamination Certificate

active

06975533

ABSTRACT:
A nonvolatile hybrid memory cell is provided which includes magnetic and semiconductor components. The cell uses a thin film stack of ferromagnetic layers situated over a silicon substrate to store data in the form of variable impedance to a spin polarized current. The cell data is isolated by semiconductor isolation elements.

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