Hybrid semiconductor substrate including...

Details Hybrid semiconductor substrate including... Hybrid semiconductor substrate including...

2010-03-18

2011-11-15

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S527000, C257S506000

Reexamination Certificate

active

08058158

ABSTRACT:
A method for manufacturing a hybrid semiconductor substrate comprises the steps of (a) providing a hybrid semiconductor substrate comprising a semiconductor-on-insulator (SeOI) region, that comprises an insulating layer over a base substrate and a SeOI layer over the insulating layer, and a bulk semiconductor region, wherein the SeOI region and the bulk semiconductor region share the same base substrate; (b) providing a mask layer over the SeOI region; and (c) forming a first impurity level by doping the SeOI region and the bulk semiconductor region simultaneously such that the first impurity level in the SeOI region is contained within the mask. Thereby, a higher number of process steps involved in the manufacturing process of hybrid semiconductor substrates may be avoided.

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Yamaoka et al., IEEE Journal of Solid-State Circuits, vol. 41, No. 11, Nov. 2006, pp. 2366-2372.
European Search Report and Opinion for European Application No. 09290372.3 dated Oct. 15, 2009, 5 pages.

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