Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-03-29
2005-03-29
Auduong, Gene N. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S170000, C257S295000
Reexamination Certificate
active
06873545
ABSTRACT:
A hybrid magnetic—semiconductor structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic applications for performing digital combinational tasks, or a magnetic field sensor. The hybrid device uses ferromagnetic materials for implementing a variable spin resistance. The ferromagnetic layers are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the “on” state the device has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic layers. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.
REFERENCES:
patent: 3650581 (1972-03-01), Boden et al.
patent: 4314349 (1982-02-01), Batcher
patent: 4360899 (1982-11-01), Dimyan et al.
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4700211 (1987-10-01), Popovic et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 4896296 (1990-01-01), Turner et al.
patent: 4905178 (1990-02-01), Mor et al.
patent: 5089991 (1992-02-01), Matthews
patent: 5173873 (1992-12-01), Wu et al.
patent: 5237529 (1993-08-01), Spitzer
patent: 5239504 (1993-08-01), Brady et al.
patent: 5245226 (1993-09-01), Hood et al.
patent: 5245227 (1993-09-01), Furtek et al.
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5289410 (1994-02-01), Katti et al.
patent: 5329480 (1994-07-01), Wu et al.
patent: 5329486 (1994-07-01), Lage
patent: 5396455 (1995-03-01), Brady et al.
patent: 5420819 (1995-05-01), Pohm
patent: 5424236 (1995-06-01), Daughton et al.
patent: 5432373 (1995-07-01), Johnson
patent: 5452163 (1995-09-01), Coffey et al.
patent: 5475277 (1995-12-01), Johnson
patent: 5488250 (1996-01-01), Hennig
patent: 5491338 (1996-02-01), Spitzer
patent: 5580814 (1996-12-01), Larson
patent: 5594366 (1997-01-01), Khong et al.
patent: 5621338 (1997-04-01), Liu et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5652875 (1997-07-01), Taylor
patent: 5793697 (1998-08-01), Scheuerlein
patent: 6064083 (2000-05-01), Johnson
patent: 6297987 (2001-10-01), Johnson et al.
patent: 6342713 (2002-01-01), Johnson
patent: 6381170 (2002-04-01), Prinz
patent: 6388916 (2002-05-01), Johnson
Paul Horowitz and Winfield Hill,The Art of Electronics, Cambridge Univ. Press, Cambridge U.K. (1980); see p. 328.
Mark Johnson and R. H. Silsbee,Interfacial Charge-Spin Coupling; Injection and Detection of Spin Magnetization in Metals, Phys. Rev. Lett. 55, 1790 (1985). (4 pages).
Mark Johnson and R. H. Silsbee,A Thermodynamic Analysis of Interfacial Transport and of the Thermomagnetoelectric System, Phys. Rev. B 35, 4959 (1987). (14 pages).
P. C. van Son, H. van Kampen and P. Wyder, Phys. Rev. Lett. 58, 2271 (1987). (3 pages).
Mark Johnson and R. H. Silsbee,Ferromagnet-Nonferromagnet Interface Resistance, Phys. Rev. Lett. 60, 377 (1988).
Mark Johnson and R. H. Silsbee,Coupling of Electronic Charge and Spin at a Ferro-magnetic-Paramagnetic Interface, Phys. Rev. B 37, 5312 (1988). (14 pages).
Mark Johnson and R. H. Silsbee,The Spin Injection Experiment, Phys. Rev. B 37, 5326 (1988). (10 pages).
Mark Johnson and H. Silsbee,Electron Spin Injection and Detection at a Ferromagnetic-Paramagnetic Interface, J. Appl. Phys. 63, 3934 (1988). (6 pages).
P. C. van Son, H. van Kampen and P. Wyder, Phys. Rev. Lett. 60, 378 (1988).
R. S. Popovic,Hall-effect Devices, Sens. Actuators 17, 39 (1989).
James Daughton,Magnetoresistive Memory Technology, Thin Solid Films 216, 162 (1992). (7 pages).
J. De Boeck, J. Harbison et al.,Non-volatile Memory Characteristics of Submicrometer Hall Structures Fabricated in Epitaxial Ferromagnetic MnA1 Films on GaAs, Electronics Letters 29, 421 (1993). (3 pages).
Mark Johnson,Spin Accumulation in Gold Films, Phys. Rev. Lett. 70, 2142 (1993). (4 pages).
Mark Johnson,Bipolar Spin Switch, Science 260, 320 (1993). (4 pages).
Mark Johnson,Bilayer Embodiment of the Bipolar Spin Switch, Appl. Phys. Lett. 63, 1435 (1993). (3 pages).
Mark Johnson,The All-Metal Spin Transistor, I.E.E.E. Spectrum Magazine 31 No. 5, 47 (1994). (5 pages).
Mark Johnson,Spin Polarization of Gold Films via Transport, J. Appl. Phys. 75, 6714 (1994). (6 pages).
Mark Johnson,Spin-Coupled Resistance Observed in Ferromagnet-Superconductor—Ferromagnet Trilayers, Appl. Phys. Lett., Sep. 12, 1994.
Mark Johnson,The Bipolar Spin Transistor, I.E.E.E. Potentials 14, 26 (1995).
S. T. Chui and J. R. Cullen,Spin Transmission in Metallic Trilayers, Phys. Rev. Lett. 74, 2118 (1995). (4 pages).
Auduong Gene N.
Gross J. Nicholas
LandOfFree
Hybrid semiconductor-magnetic device and method of operation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hybrid semiconductor-magnetic device and method of operation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid semiconductor-magnetic device and method of operation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3373041