Hybrid process for SBD metallurgies

Coating processes – Electrical product produced – Condenser or capacitor

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156643, 156650, 427 88, 427 89, 427 96, 427259, 430314, 430315, H01L 21283, H01L 2948

Patent

active

042725615

ABSTRACT:
A method for forming thin film patterns in the fabrication of integrated circuits utilizing a lift-off mask in an inverse vertical relationship with the desired metal film. The method involves the preliminary blanket deposition of the metal in-point, followed by a coating of a patterned lift-off mask over which is blanket coated a dry-etch resistant material with subsequent removal of the lift-off mask, and dry etching of the exposed metal film. In one embodiment the dry-etch mask can comprise a diverse metal layer when a dry-etch ambient is employed which is passive to the diverse metal. In another embodiment, where dry etch ambients are employed which are corrosive to the diverse metal which is desired in the final structure, it can be covered with a blanket layer of any convenient dry-etch resistant material, such as magnesium oxide, prior to removal of the lift-off mask. This method has effective application in the fabrication of Schottky barrier diodes, transistors, and other electronic components or discrete and integrated devices requiring high quality metal to semiconductor junctions or interfaces.

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Fredericks et al., "Polysulfone Lift-Off Masking Technique", IBM TDB, vol. 20, No. 3, p. 989, Aug. 1977.
Logan et al., "Planar Metal Interconnections by Backfilled Quartz", IBM TDB, vol. 21, No. 12. p. 4865-4866, May 1979.
Dalsl et al., "Chrome-Copper-Chrome Lift Off Process", _IBM TDB, vol. 20, No. 8, p. 3080, Jan. 1978.
Bergeron, "Double Lift Off Via Interconnection and Passivation Process", IBM TDB, vol. 21, No. 4, p. 1371, Sep. 1978.

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