Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2008-05-05
2010-11-16
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S064000, C257S347000, C257S521000, C257S527000, C257S628000, C257SE21036, C257SE21233, C257SE29003, C257SE29004, C257SE29105, C438S198000
Reexamination Certificate
active
07834425
ABSTRACT:
The present invention relates to a hybrid orientation semiconductor-on-insulator (SOI) substrate structure that contains a base semiconductor substrate with one or more first device regions and one or more second device regions located over the base semiconductor substrate. The one or more first device regions include an insulator layer with a first semiconductor device layer located atop. The one or more second device regions include a counter-doped semiconductor layer with a second semiconductor device layer located atop. The first and the second semiconductor device layers have different crystallographic orientations. Preferably, the first (or the second) device regions are n-FET device regions, and the first semiconductor device layer has a crystallographic orientation that enhances electron mobility, while the second (or the first) device regions are p-FET device regions, and the second semiconductor device layer has a different surface crystallographic orientation that enhances hole mobility.
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Ieong Meikei
Wang Xinlin
Yang Min
International Business Machines - Corporation
Nguyen Dao H
Scully , Scott, Murphy & Presser, P.C.
Zarick, Esq. Gail H.
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