Hybrid orientation scheme for standard orthogonal circuits

Details Hybrid orientation scheme for standard orthogonal circuits Hybrid orientation scheme for standard orthogonal circuits

2009-04-28

2011-11-08

Gebremariam, Samuel (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27067, C257SE29004, C257SE21598, C257SE21632, C438S198000, C438S455000

Reexamination Certificate

active

08053844

ABSTRACT:
Embodiments herein present device, method, etc. for a hybrid orientation scheme for standard orthogonal circuits. An integrated circuit of embodiments of the invention comprises a hybrid orientation substrate, comprising first areas having a first crystalline orientation and second areas having a second crystalline orientation. The first crystalline orientation of the first areas is not parallel or perpendicular to the second crystalline orientation of the second areas. The integrated circuit further comprises first type devices on the first areas and second type devices on the second areas, wherein the first type devices are parallel or perpendicular to the second type devices. Specifically, the first type devices comprise p-type field effect transistors (PFETs) and the second type devices comprise n-type field effect transistors (NFETs).

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