Hybrid-mode LDMOS

Details Hybrid-mode LDMOS Hybrid-mode LDMOS

2007-10-30

2011-11-22

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S337000, C257S338000, C257S339000, C257S341000, C257S342000, C257SE27029

Reexamination Certificate

active

08063443

ABSTRACT:
An MOS-bipolar hybrid-mode LDMOS device has a main gate input and a control gate input wherein the device operates in an MOS mode when both gate inputs are enabled, and operates in a bipolar mode when the main gate input is enabled and the control gate input is disabled. The device can drive the gate of a power MOSFET to deliver the high current required by the power MOSFET while in the bipolar mode, and provide a fully switching between supply voltage and ground to the gate of the power MOSFET while in the MOS mode.

REFERENCES:
patent: 6870218 (2005-03-01), Cai
patent: 7125777 (2006-10-01), Cai et al.
Texas Instruments, TrueDrive Technology proeduct inforamtion sheet, 2006 (1 page).

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