Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
1998-05-26
2001-09-25
Saadat, Mahshid (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S728000, C257S724000, C257S664000
Reexamination Certificate
active
06294827
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates in general to electronic engineering and more specifically to a microwave hybrid integrated circuit (IC).
BACKGROUND OF THE INVENTION
A microwave hybrid integrated circuit is known, the circuit comprises a dielectric board having a topological metallization pattern on its face side and a shield grounding metallization on the back side thereof. The board has a metallized hole electrically connecting a bonding pad that makes part of the topological metallization pattern, to the shield grounding metallization. A capacitor is secured with its bottom plate on the bonding pad, while its top plate electrically connects the capacitor to other circuit components through a wire lead. The board is electrically connected with its back size to a metal grounded base (Hyper World, September 1990, numero 2. Thompson composents microondes. 20th European microwave conference. 90 the international conference and exhibition designed for the microwave community, conference proceedings, Volume 1. Duna international hotel, Budapest, Hungary, September 10-13 published by Microwave Exhibitions Publishers Ltd.).
The aforecited microwave hybrid integrated circuit is possessed of low electrical characteristics caused by a relatively high spurious inductance of the metallized grounding hole, as well as by low weight-size parameters associated with a large height of the circuit.
Another microwave hybrid integrated circuit is known, the circuit comprises a dielectric board having a hole and provided with a topological metallization pattern on its face side and a shield grounding metallization on the back side which is electrically connected to a metal base, a capacitor placed in the board hole and secured with its bottom plate on the metal grounded base, while the capacitor top plate is electrically connected, through a wire lead, to the topological metallization pattern (cf. Microwaves and RF, 1986, vol.9, p.232).
The aforementioned microwave hybrid integrated circuit is possessed of low electrical characteristics resultant from a high spurious inductance of the connection of the top capacitor plate to the topological metallization pattern, as well as low weight-size parameters associated with large linear dimensions due to long distances between the top capacitor plate and the topological metallization pattern.
SUMMARY OF THE INVENTION
The principal object of the present invention is to provide a microwave hybrid integrated circuit having such a constructive arrangement that would provide to enhance electrical and weight-size characteristics of the circuit.
The foregoing object is accomplished due to the fact that in a microwave hybrid IC, comprising a dielectricn insulating board provided with a topological metallization pattern on its face side and with a shield grounding metallization on its back side, said metallization being electrically connected to a metal base, a capacitor electrically connected by its first plate to the base, and by its second plate to the topological metallization pattern, according to the invention, a metallized recess is formed on the back or face side of the board, the metallization of which recess serves as the first capacitor plate, the board portion above or below the recess serves as the capacitor dielectric, while the second plate is located on the face side of the board and makes a part of the topological metallization pattern, the remaining board thickness in the recess being equal to 1-400 &mgr;m.
A metallized counter recess may be formed on the face side of the board above the recess in the back side thereof, the metallization of said hole serving as the second capacitor plate and being electrically connected to the topological metallization pattern.
On the metal base a projection may be formed being placed in the board recess and electrically connected to the metallization of the recess, the spacing between the side walls of the recess and the side walls of the projection being of 0.001 to 5.0 mm.
The recess in the board is expedient to be filled with an electrically conducting material.
The topological metallization pattern may comprise the capacitor trimming elements electrically connected to the capacitor plate.
Forming the metallized recess in the back board surface and using the recess metallization as the bottom capacitor plate and the rest of the board thickness in the recess as the capacitor dielectric, as well as establishing the second (top) capacitor plate as a part of the topological metallization pattern on the face board surface allow to form the capacitor within the board volume, thus improving the weight-size characteristics of the circuit.
Restricting the remainder board thickness from below is defiled by the board strength, and from above it is defined by a minimum capacity and maximum area of the capacitor that can be used in the circuit so as to improve the weight-size characteristics thereof.
Forming the projection on the metal base, its locataion in the recess on the board back side, and the electrical connection of the recess metallization to the projection results in a reduced spurious inductance of the grounding and hence improves the electrical characteristics of the circuit.
Restricting the spacing between the projection and the recess walls from below is defined by the possibility to displace the projection towards either of the recess walls, and from above it is defined to ensure an adequate strength of the recess bottom.
Forming the metallized counter recess on the face board side above the recess in the back board surface enhance the manufacturability of the circuit.
Forming the recess in the face board surface and filling said recess with an electrically conducting material allows of establishing an electric connection between the capacitor plate and the topological metallization pattern having the low spurious inductance, thus enhancing the electrical parameters of the circuit.
Providing the capacitor trimming elements in the topological metallization pattern, which elements are electrically connected to the top capacitor plate and situated above the recess in the board, enables more accurate capacity values of the capacitor, thereby enhancing the electrical parameters of the circuit.
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Aizenberg Eduard Volfovich
Beil Vladimir Iliich
Iovdalsky Viktor Anatolievich
Lopin Mikhail Ivanovich
Clark Jhihan B.
Piper Marbury Rudnick & Wolfe
Saadat Mahshid
Samsung Electronics Co,. Ltd.
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