Hybrid memory device

Details Hybrid memory device Hybrid memory device

2005-09-19

2009-08-25

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104, C257SE21663

Reexamination Certificate

active

07579640

ABSTRACT:
A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.

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patent: 2003-100994 (2003-04-01), None
“Recent Progress in Ferroelectric Memories,” pp. 113-125.
Shoichi Masui, “Applications of Ferroelectric Random Access Memory,” Recent Progress in Ferroelectric Memories, pp. 112-125.

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