Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-08-27
2009-12-08
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07630231
ABSTRACT:
A magnetoresistive hybrid memory cell includes first and second stacked structures. The first stacked structure includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein the first magnetic region has a fixed first magnetic moment vector and the second magnetic region has a free second magnetic moment vector that is switchable between the same and opposite directions with respect to the fixed first magnetic moment vector. The second stacked structure is at least partly arranged in a lateral relationship with respect to the first stacked structure and includes a third magnetic region having a fixed third magnetic moment vector and the second magnetic region. The first and second structures are arranged between at least two electrodes in electrical contact therewith.
REFERENCES:
patent: 6269018 (2001-07-01), Monsma et al.
patent: 6785159 (2004-08-01), Tuttle
patent: 6864551 (2005-03-01), Tsang
patent: 6924520 (2005-08-01), Park et al.
patent: 7015555 (2006-03-01), Lee et al.
Klostermann Ulrich
Miltat Jacques
Nakatani Yoshinobu
Altis Semiconductor S.N.C.
Centre National de la Recherche Scientifique
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Nguyen Dang T
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