Hybrid memory cell for spin-polarized electron current...

Details Hybrid memory cell for spin-polarized electron current... Hybrid memory cell for spin-polarized electron current...

2006-06-13

2006-06-13

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000

Reexamination Certificate

active

07061797

ABSTRACT:
A magnetoresistive hybrid memory cell includes first and second stacked structures. The first stacked structure includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein the first magnetic region has a fixed first magnetic moment vector and the second magnetic region has a free second magnetic moment vector that is switchable between the same and opposite directions with respect to the fixed first magnetic moment vector. The second stacked structure is at least partly arranged in a lateral relationship with respect to the first stacked structure and includes a third magnetic region having a fixed third magnetic moment vector and the second magnetic region. The first and second structures are arranged between at least two electrodes in electrical contact therewith.

REFERENCES:
patent: 6785159 (2004-08-01), Tuttle
patent: 6864551 (2005-03-01), Tsang

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