Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Patent
1993-10-14
1995-02-28
Saadat, Manshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
257401, 257723, 257786, H01L 2166, H01L 2316, H01L 3902, H01L 2978
Patent
active
053939913
ABSTRACT:
A highly reliable hybrid integrated circuit device includes at least one bare chip power MOS-FET and a control IC for controlling the power MOS-FET, both mounted on a circuit substrate. A burn-in test voltage supply line supplies a burn-in test voltage to a gate terminal of the power MOS-FET for a burn-in test. Where a plurality of MOS-FETs are present, burn-in test voltage supply lines connect the gate terminals of the power MOS-FETs to each other. The supply lines are severed to electrically separate the gate terminals from each other after the burn-in test is completed. Alternatively, resistors having a predetermined resistance are inserted in the supply lines so that normal operation, after the burn-in test, is not affected by the gate connections.
REFERENCES:
patent: 5036380 (1991-01-01), Chase
Goodman et al. 1 IBM Technical Disclosure Bulletin, "Pad Deletion Test Technique", vol. 26, No. 10A, Mar. 1984, pp. 4889-4890. l
IBM Tehnical Disclosure Bulletin, vol. 36, No. 08, Aug. 1993, pp. 223-224.
Mitsubishi Denki Kubushiki Kaisha
Saadat Manshid D.
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