Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Patent
1998-05-26
2000-05-02
Arroyo, Teresa M.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
257708, 257691, H01L 2334
Patent
active
060575999
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The present invention relates in general to electronic engineering and more specifically to a power microwave hybrid integrated circuit.
BACKGROUND OF THE INVENTION
A microwave hybrid integrated circuit is known, in which circuit a dielectric board having a topological metallization pattern on its face side and a shield grounding metallization on the back side thereof is secured on a metal base having a projection which is placed in the hole of the board and has a supporting pad in its upper portion, on which pad a semiconducter chip is placed. The ground contact is shaped as the rectangular portion of the base projection, the upper portion of the ground contact on the base projection and the face surface of the chip are coplanar with the face surface of the board. Chip bonding pads located on the side having the metal grounding projection are electrically connected, through said projection to the topological metallization pattern (cf. "Transistorized amplifier", No. M42213, 6III2030295T, Var. 2-89, TC2.030.1 50C, 1989).
The aforecited microwave hybrid integrated circuit is possessed of low electrical and weight-size characteristics, and also of a manufacturing complexity associated with a need to make precisely the projection on the base and the hole in the board.
Another microwave hybrid integrated circuit is known, in which circuit a dielectric board having a topological metallization pattern on its face side and a shield grounding metallization on the back side thereof is also secured on a metal base having a projection which is also placed in the hole of the board and has a supporting pad in its upper portion, om which pad a semiconducter chip is placed. The projection has two ground contacts shaped as metal parallelepipeds situated on two opposite chip sides and arranged in the same plane with the chip face surface and the board face surface. The transistor terminals (the source and drain ones) are situated on two opposite sides and are electrically connected to the board topological metallization pattern, while the transistor gates are interconnected and electrically connected to the ground contacts of the metal projection, which made it possible to reduce the terminal length and thereby to enhance the circuit characteristics, though inadequately ((cf. "Transistorized amplifier", No.M42213, 6III2030295 T, Var. 2-89, .LAMBDA.P434815.005C, 1989).
The above integrated circuit is possessed of low electrical and weight-size characteristics, and also of a manufacturing complexity associated with a need make the projection on the base and the hole in the board.
SUMMARY OF THE INVENTION
The principal object of the present invention is to provide a power microwave hybrid integrated circuit having such a constructive arrangement that would allow to enhance electrical and weight-size characteristics of the circuit and to raise its manufacturability.
The foregoing object is accomplished due to the fact that in a power microwave hybrid integrated circuit, comprising an electrically and heat conducting metal base with a projection, on which a naked semiconductor chip having bonding pads is mounted and fixed, a dielectric board situated on the base and having a topological metallization pattern on its face side and a shield grounding metallization on the back side, and a hole, the chip-carrying projection being arranged in the board hole so that the chip face surface plane is coplanar with the board face surface, a portion of the chip bonding pads are electrically connected to signal conductors of the topological metallization pattern, while another portion of the chip bonding pads are grounded by an electrical connection with the metal base projection, according to the present invention, a recess is formed on the board back side above the base projection, the length and width of said recess exceeding those of the projection by 0.1-1.0 mm, the bottom of said recess having holes 0.1-0.5 mm in diameter, or equivalent in area rectangular metallized holes at least partially filled with an
REFERENCES:
patent: 5073814 (1991-12-01), Cole et al.
patent: 5331203 (1994-07-01), Wojnarowski et al.
patent: 5559363 (1996-09-01), Immorlica, Jr.
Aizenberg Eduard Volfovich
Beil Vladimir Iliich
Iovdalsky Viktor Anatolievich
Arroyo Teresa M.
Samsung Electronics Co,. Ltd.
LandOfFree
Hybrid high-power microwave-frequency integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hybrid high-power microwave-frequency integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid high-power microwave-frequency integrated circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1595962