Static information storage and retrieval – Interconnection arrangements
Reexamination Certificate
2006-12-20
2008-11-18
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Interconnection arrangements
C365S200000, C365S230030
Reexamination Certificate
active
07453712
ABSTRACT:
A hybrid flash memory device includes an array including a first area and a second area having a larger number of stored bits per cell than the first area. The device includes a hidden area including a first reserved block area and a second reserved block area, wherein the first reserved block area includes a plurality of first memory blocks having the same number of stored bits per cell as the first area, the second reserved block area includes a plurality of second memory blocks having the same number of stored bits per cell as the second area, and a flash translation layer configured to replace a bad block generated in the first main area with the first memory block and replace a bad block generated in the second main area with the second memory block, wherein the flash translation layer flexibly assigns functions of the first memory blocks or the second memory blocks depending on whether the first and second memory blocks are all used.
REFERENCES:
patent: 6418052 (2002-07-01), Shibata et al.
patent: 6947322 (2005-09-01), Anzai et al.
patent: 2006/0155917 (2006-07-01), Di Sena et al.
patent: 2007/0233752 (2007-10-01), Bangalore et al.
patent: 11-345491 (1999-12-01), None
patent: 2001-006374 (2001-12-01), None
patent: 2002-208287 (2002-07-01), None
patent: 2004-127481 (2004-04-01), None
patent: 1020040011387 (2004-02-01), None
patent: 1020050007653 (2005-01-01), None
patent: 1020060012696 (2006-02-01), None
patent: 1020060021548 (2006-03-01), None
patent: 1020070048384 (2007-05-01), None
English Abstract for Publication No.: 2002-208287.
English Abstract for Publication No.: 1020050007653.
English Abstract for Publication No.: 1020060012696.
English Abstract for Publication No.: 1020060021548.
English Abstract for Publication No.: 1020070048384.
Kim Seon-Taek
Lee Byoung-Kook
F. Chau & Associates
Le Thong Q
Samsung Electronics Co,. Ltd.
LandOfFree
Hybrid flash memory device and method for assigning reserved... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hybrid flash memory device and method for assigning reserved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid flash memory device and method for assigning reserved... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4037051