Hybrid-FET and its application as SRAM

Details Hybrid-FET and its application as SRAM Hybrid-FET and its application as SRAM

2005-01-31

2008-12-30

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S350000, C257S347000, C257S348000, C257S349000, C257SE51005

Reexamination Certificate

active

07470951

ABSTRACT:
A semiconductor device (51) is provided herein. The semiconductor device comprises (a) a substrate (57), a semiconductor layer (53) disposed on said substrate and comprising a horizontal region (54) and a fin which extends above, and is disposed adjacent to, said horizontal region, and (c) at least one channel region (63) defined in said fin and in said horizontal region.

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patent: 7193279 (2007-03-01), Doyle et al.
patent: 2004/0150071 (2004-08-01), Kondo et al.
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patent: 2004/0235300 (2004-11-01), Mathew et al.
patent: 2007/0085134 (2007-04-01), Anderson et al.

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