Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-18
2008-03-25
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000
Reexamination Certificate
active
07348633
ABSTRACT:
A substrate for a semiconductor device is disclosed including, in one embodiment, a plurality of semiconductor-on-insulator (SOI) wafers bonded to one another in a single stack. A distal end of the stack includes a first SOI region with a first semiconductor layer having a thickness and a first surface orientation. A surface of the single stack may further include a non-SOI region and/or at least one second SOI region. The non-SOI region may include bulk silicon that extends through all of the insulator layers of the single stack and has a thickness different than that of the first silicon layer. Each second SOI region has a second semiconductor layer having a thickness different than that of the first semiconductor layer and/or a different surface orientation than the first surface orientation. The substrate thus allows formation of different devices on optimal substrate regions that may include different surface orientations and/or different thicknesses and/or different bulk or SOI structures.
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U.S. Appl. No. 10/725,850 Title: Planar Substrate With Selected Semiconductor Crystal Orientations Formed by Localized Amorphization and Recrystallization of Stacked Template Layers filed: Dec. 2, 2003 DeSouza, et al.
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Lee Junedong
Sadana Devendra K.
Schepis Dominic J.
Shahidi Ghavam G.
C. Li Todd M.
Hoffman Warnick & D'Alessandro LLC
Vu Hung
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