Hybrid crystallographic surface orientation substrate having...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S350000

Reexamination Certificate

active

07348633

ABSTRACT:
A substrate for a semiconductor device is disclosed including, in one embodiment, a plurality of semiconductor-on-insulator (SOI) wafers bonded to one another in a single stack. A distal end of the stack includes a first SOI region with a first semiconductor layer having a thickness and a first surface orientation. A surface of the single stack may further include a non-SOI region and/or at least one second SOI region. The non-SOI region may include bulk silicon that extends through all of the insulator layers of the single stack and has a thickness different than that of the first silicon layer. Each second SOI region has a second semiconductor layer having a thickness different than that of the first semiconductor layer and/or a different surface orientation than the first surface orientation. The substrate thus allows formation of different devices on optimal substrate regions that may include different surface orientations and/or different thicknesses and/or different bulk or SOI structures.

REFERENCES:
patent: 6320228 (2001-11-01), Yu
patent: 6911383 (2005-06-01), Doris et al.
patent: 7061054 (2006-06-01), Tomiye et al.
patent: 7208815 (2007-04-01), Chen et al.
patent: 2004/0256700 (2004-12-01), Doris et al.
U.S. Appl. No. 10/725,850 Title: Planar Substrate With Selected Semiconductor Crystal Orientations Formed by Localized Amorphization and Recrystallization of Stacked Template Layers filed: Dec. 2, 2003 DeSouza, et al.
U.S. Appl. No. 10/902,557 Title: Dual Simox Hybrid Orientation Technology (Hot) Substrates filed: Jul. 29, 2004 Saenger, et al.

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