Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Patent
1993-04-12
1999-02-02
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
257782, 257786, H01L 2348, H01L 2352, H01L 2940
Patent
active
058669515
ABSTRACT:
The composite hybrid semiconductor structure contains a support plate substrate (11) with a number of at least two support connector spots (13) and a semiconductor chip or semiconductor wafer substrate (10) with a number of at least two chip connector spots (16). The structures is distinguished by a respectively thermally and electrically conducting adhesive layer (13') on the surface of the support plate substrate (11) within the areas of the support connector spots (13), where the said substrates (10, 11) with the said connector spots (13, 16) placed opposite each other and in electrically conducting and mechanically firm connection have been brought into connection with each other by the said electrically conductive adhesive layers (13').
REFERENCES:
patent: 3292240 (1966-12-01), McNutt
patent: 3303393 (1967-02-01), Hymes
patent: 3517279 (1970-06-01), Ikeda
patent: 3657610 (1972-04-01), Yamamoto et al.
patent: 3871014 (1975-03-01), King et al.
patent: 4442966 (1984-04-01), Jourdain
patent: 4647959 (1987-03-01), Smith
patent: 5001542 (1991-03-01), Tsukagoshi et al.
patent: 5068714 (1991-11-01), Seipler
patent: 5444301 (1995-08-01), Song et al.
Microelectronics!, in Feinwerktechnik+Messtechnik vol. 92, No. 2, pp. 67-69 (Munich, Germany, Mar. 1984).
Flohrs Peter
Gademann Lothar
Hartmann Juergen
Clark S. V.
Robert & Bosch GmbH
Whitehead Jr. Carl W.
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