Static information storage and retrieval – Systems using particular element – Molecular or atomic
Reexamination Certificate
2008-02-13
2010-10-19
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Molecular or atomic
C365S129000, C365S164000, C977S724000, C977S742000, C977S943000
Reexamination Certificate
active
07817458
ABSTRACT:
A hybrid memory system having electromechanical memory cells is discussed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.
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Brock Darren K.
Rueckes Thomas
Segal Brent M.
Nantero Inc.
Nguyen Dang T
Sofocleous Alexander
Wilmer Cutler Pickering Hale and Dorr LLP
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