Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2007-04-27
2010-11-02
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S306000, C257S738000
Reexamination Certificate
active
07825522
ABSTRACT:
A device fabricated on a chip is disclosed. The device generally includes (A) a first pattern and a second pattern both created in an intermediate conductive layer of the chip, (B) at least one via created in an insulating layer above the intermediate conductive layer and (C) a first bump created in a top conductive layer above the insulating layer. The first pattern generally establishes a first of a plurality of plates of a first capacitor. The via may be aligned with the second pattern. The first bump may (i) be located directly above the first plate, (ii) establish a second of the plates of the first capacitor, (iii) be suitable for flip-chip bonding and (iv) connect to the second pattern through the via such that both of the plates of the first capacitor are accessible in the intermediate conductive layer.
REFERENCES:
patent: 2006/0203421 (2006-09-01), Morris et al.
Dong Yikui (Jen)
Howard Steven L.
Lowrie David S.
Zhong Freeman Y.
LSI Corporation
Maiorana PC Christopher P.
Vu Hung
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