Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-25
2007-09-25
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S067000, C257S347000, C257S354000, C365S154000, C365S156000
Reexamination Certificate
active
11108012
ABSTRACT:
The present invention provides a 6T-SRAM semiconducting structure including a substrate having an SOI region and a bulk-Si region, wherein the SOI region and the bulk-Si region have a same or differing crystallographic orientation; an isolation region separating the SOI region from the bulk-Si region; and at least one first device located in the SOI region and at least one second device located in the bulk-Si region. The SOI region has an silicon layer atop an insulating layer. The bulk-Si region further comprises a well region underlying the second device and a contact to the well region, wherein the contact stabilizes floating body effects. The well contact is also used to control the threshold voltages of the FETs in the bulk-Si region to optimized the power and performance of the SRAM cell built from the combination of the SOI and bulk-Si region FETs.
REFERENCES:
M. Yang, et al., IEDM 2003.
J. Tschanz, et al., IEEE Journal of Solid State Circuits, vol. 37, No. 11, pp. 1396-1402, Nov. 2002.
M. Yang, et al., “High-Performance CMOS SOI Devices on Hybrid Crystal Oriented Substrates”. IEDM 2003.
J. Tschanz, et al. “Adaptive Body Bias For Reducing Impacts of Die-to-Die and Within-Die Parameter Variations on Microprocessor Frequency and Leakage” IEEE Journal of Solid-State Circuits, vol. 37, No. 11, pp. 1396-1402, Nov. 2002.
Chang Leland
Narasimha Shreesh
Rohrer Norman J.
Sleight Jeffrey W.
Scully , Scott, Murphy & Presser, P.C.
Tuchman, Esq. Ido
Wojciechowicz Edward
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