HSQ with high plasma etching resistance surface for borderless v

Details HSQ with high plasma etching resistance surface for borderless v HSQ with high plasma etching resistance surface for borderless v

1998-05-27

2000-07-11

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

257750, 257758, 257759, H01L 2348, H01L 2352, H01L 2940

Patent

active

060877243

ABSTRACT:
HSQ is employed for gap filling patterned metal layers. The surface of the deposited HSQ gap fill layer is modified to decrease its plasma etching rate. Embodiments include modifying the HSQ surface by exposure to a plasma, such as a nitrogen-containing plasma, e.g., a plasma containing ammonia or hydrogen
itrogen, to form a nitrided surface region. Reduction of the plasma etching rate of HSQ enables formation of reliable low resistance borderless vias.

REFERENCES:
patent: 5607773 (1997-03-01), Ahlburn et al.
patent: 5619072 (1997-04-01), Mehta
patent: 5750403 (1998-05-01), Inoue et al.
patent: 5818111 (1998-10-01), Jeng et al.

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