Housing for semiconductor device

Details Housing for semiconductor device Housing for semiconductor device

1991-06-07

1994-01-04

Wasil, Daniel D.

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Special medium during sintering

419 10, 419 38, B22F 316, B22F 300

Patent

active

052757820

ABSTRACT:
A housing for a semiconductor device is improved to avoid thermal distortions. The housing is formed of an Al-Si compound material and includes a housing member having a space for holding the semiconductor device. Occlusion gas contained in the Al-Si compound material is removed so that at least any nitrogen gas remaining in occlusion after degassing is 0.1 percent by weight or less. Since the housing member substantially does not contain occlusion gas, the housing is not subject to thermal distortion even though the housing is exposed to heat in operation.

REFERENCES:
patent: 4460541 (1984-07-01), Singleton et al.
patent: 4702885 (1987-10-01), Obani et al.
patent: 4830820 (1989-05-01), Itoh et al.
patent: 4838936 (1989-06-01), Akechi
patent: 4898612 (1990-02-01), Gilman et al.
patent: 4926242 (1990-05-01), Itoh et al.
patent: 5039476 (1991-08-01), Adachi et al.

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