Hourglass ram

Details Hourglass ram Hourglass ram

2005-07-05

2005-07-05

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S317000, C257S309000, C257S213000

Reexamination Certificate

active

06914289

ABSTRACT:
An integrated circuit having a non-volatile HGRAM cell includes a first section having impurity materials implanted into a substrate to form NPN transistor regions and a second section having a gate structure to control the currents conducted in the NPN transistor regions. The gate structure is formed at least above the P-type channel region of the substrate and includes an hourglass shaped material with gates to control the movement of holes through the restricted portion of the hourglass.

REFERENCES:
patent: 5763913 (1998-06-01), Jeong
patent: 6093604 (2000-07-01), Jeong
patent: 6211531 (2001-04-01), Nakazato et al.
patent: 6297989 (2001-10-01), Cloud et al.
patent: 6574143 (2003-06-01), Nakazato
patent: WO 00/70675 (1999-05-01), None
patent: WO 01/06570 (2001-01-01), None

Affiliated with

Also associated with

Rating

Hourglass ram does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hourglass ram, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hourglass ram will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3404008