Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-09-11
2000-02-29
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429809, 20429815, C23C 1434
Patent
active
06030510&
ABSTRACT:
A method and apparatus for facilitating high-quality hot reflow sputtering with no occurrence of voids while reducing the processing time by rapid heating of the substrate. The method comprises two steps. In the first step, a thin base film 81 of aluminum is formed on the side and bottom surfaces of a minute hole 90 formed in the surface of a substrate 9. Substrate 9 is heated to a first temperature of no more than 100.degree. C. at which it is possible to prevent gaps occurring in the base film 81. In the second step, the hole is filled in with aluminum by depositing a further film of aluminum 82 inside hole 90 and causing it to reflow. Substrate 9 is heated to a second temperature which is higher than the first temperature. The hot reflow sputtering apparatus is equipped with an electrostatic attraction mechanism 43, which uses static electricity to grip substrate 9 against a substrate holder 4 provided with an indentation 40 in the substrate mounting surface thereof, and a pressurizing gas introduction system 42 which introduces a pressurizing gas into the indentation 40. A control unit 47 controls the apparatus so that neither electrostatic attraction mechanism 43 nor pressurizing gas introduction system 42 are operated in the first step. In the second step the pressurizing gas introduction system 42 is operated after the electrostatic attraction mechanism 43 has been operated.
REFERENCES:
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patent: 5270255 (1993-12-01), Wong
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patent: 5775416 (1998-07-01), Heimanson et al.
Kobayashi Masahiko
Takahashi Nobuyuki
Anelva Corporation
Cantelmo Gregg
Nguyen Nam
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