Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Patent
1997-08-06
1999-11-09
Lam, Tuan T.
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
327543, H03K 1706, H03K 17687
Patent
active
059822252
ABSTRACT:
A circuit actively monitors and measures the amount of MOS device degradation due to, for example, the hot electron effect, and makes compensatory adjustments to device voltage levels or clock speed to maintain desired levels of functionality and performance. Monitoring can be done separately for NFET and PFET devices to selectively adjust for different degradation rates between the two. In operation, the monitor circuit compares the performance of a stressed device to a reference device, that is, an unstressed device which has not been degraded by the hot-electron effect. The monitor circuit outputs a signal indicating the amount of device degradation. This signal is used to adjust the supply voltage to that device or to the chip or otherwise compensate for the degradation. The monitor circuit can be formed on-chip or off-chip.
REFERENCES:
patent: 4704547 (1987-11-01), Kirsch
patent: 5640122 (1997-06-01), McClure
Forhan Timothy E.
Hook Terence B.
Mittl Steven W.
Nowak Edward J.
Sayala Madhu
International Business Machines - Corporation
Lam Tuan T.
Shukurko Eugene I.
LandOfFree
Hot electron compensation for improved MOS transistor reliabilit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hot electron compensation for improved MOS transistor reliabilit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hot electron compensation for improved MOS transistor reliabilit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1461723