Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-22
2008-12-02
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S242000, C257SE29260, C257SE29257, C438S259000, C438S270000, C438S271000, C438S589000
Reexamination Certificate
active
07459744
ABSTRACT:
A programmable storage device includes a first diffusion region underlying a portion of a first trench defined in a semiconductor substrate and a second diffusion region occupying an upper portion of the substrate adjacent to the first trench. The device includes a charge storage stack lining sidewalls and a portion of a floor of the first trench. The charge storage stack includes a layer of discontinuous storage elements (DSEs). Electrically conductive spacers formed on opposing sidewalls of the first trench adjacent to respective charge storage stacks serve as control gates for the device. The DSEs may be silicon, polysilicon, metal, silicon nitride, or metal nitride nanocrystals or nanoclusters. The storage stack includes a top dielectric of CVD silicon oxide overlying the nanocrystals overlying a bottom dielectric of thermally formed silicon dioxide. The device includes first and second injection regions in the layer of DSEs proximal to the first and second diffusion regions.
REFERENCES:
patent: 4184207 (1980-01-01), McElroy
patent: 4751558 (1988-06-01), Kenney
patent: 4785337 (1988-11-01), Kenney
patent: 4833094 (1989-05-01), Kenney
patent: 4860070 (1989-08-01), Arimoto et al.
patent: 5196722 (1993-03-01), Bergendahl et al.
patent: 5252845 (1993-10-01), Kim et al.
patent: 5315142 (1994-05-01), Acovic et al.
patent: 5411905 (1995-05-01), Acovic et al.
patent: 5432365 (1995-07-01), Chin et al.
patent: 5460988 (1995-10-01), Hong
patent: 5567635 (1996-10-01), Acovic et al.
patent: 5705415 (1998-01-01), Orlowski et al.
patent: 5721448 (1998-02-01), Hauf et al.
patent: 5786612 (1998-07-01), Otani et al.
patent: 5801415 (1998-09-01), Lee et al.
patent: 5824580 (1998-10-01), Hauf et al.
patent: 5907775 (1999-05-01), Tseng
patent: 5914523 (1999-06-01), Bashir et al.
patent: 5923046 (1999-07-01), Tezuka et al.
patent: 5969383 (1999-10-01), Chang et al.
patent: 5998263 (1999-12-01), Sekariapuram et al.
patent: 6074954 (2000-06-01), Lill et al.
patent: 6117733 (2000-09-01), Sung et al.
patent: 6121148 (2000-09-01), Bashir et al.
patent: 6133601 (2000-10-01), Watanabe
patent: 6172905 (2001-01-01), White et al.
patent: 6228706 (2001-05-01), Horak et al.
patent: 6265268 (2001-07-01), Halliyal et al.
patent: 6281064 (2001-08-01), Mandelman et al.
patent: 6287917 (2001-09-01), Park et al.
patent: 6307782 (2001-10-01), Sadd et al.
patent: 6320784 (2001-11-01), Muralidhar et al.
patent: 6330184 (2001-12-01), White et al.
patent: 6365452 (2002-04-01), Perng et al.
patent: 6368916 (2002-04-01), Nakagawa
patent: 6372617 (2002-04-01), Kitamura
patent: 6373096 (2002-04-01), Hisamune et al.
patent: 6399441 (2002-06-01), Ogura et al.
patent: 6461905 (2002-10-01), Wang et al.
patent: 6486028 (2002-11-01), Chang et al.
patent: 6537870 (2003-03-01), Shen
patent: 6544827 (2003-04-01), Abiko
patent: 6555427 (2003-04-01), Shimizu et al.
patent: 6559032 (2003-05-01), Gonzalez et al.
patent: 6583466 (2003-06-01), Lin et al.
patent: 6620664 (2003-09-01), Ma et al.
patent: 6638810 (2003-10-01), Bakli et al.
patent: 6673681 (2004-01-01), Kocon et al.
patent: 6674120 (2004-01-01), Fujiwara
patent: 6677204 (2004-01-01), Cleeves et al.
patent: 6687156 (2004-02-01), Kobayashi et al.
patent: 6706599 (2004-03-01), Sadd et al.
patent: 6709922 (2004-03-01), Ebina et al.
patent: 6713834 (2004-03-01), Mori et al.
patent: 6734492 (2004-05-01), Yamazaki et al.
patent: 6747308 (2004-06-01), Mitros et al.
patent: 6750499 (2004-06-01), Wu
patent: 6762092 (2004-07-01), Yuan et al.
patent: 6803620 (2004-10-01), Moriya et al.
patent: 6816414 (2004-11-01), Prinz
patent: 6818508 (2004-11-01), Shimizu et al.
patent: 6818512 (2004-11-01), Hsieh
patent: 6818939 (2004-11-01), Hadizad
patent: 6853587 (2005-02-01), Forbes
patent: 6864540 (2005-03-01), Divakaruni et al.
patent: 6894339 (2005-05-01), Fan et al.
patent: 6903418 (2005-06-01), Iwamoto et al.
patent: 6916715 (2005-07-01), Hsiao et al.
patent: 6936887 (2005-08-01), Harari et al.
patent: 6952034 (2005-10-01), Hu et al.
patent: 6998313 (2006-02-01), Lin
patent: 7015537 (2006-03-01), Lee et al.
patent: 7045423 (2006-05-01), Ichige et al.
patent: 7078286 (2006-07-01), Mehta
patent: 7098502 (2006-08-01), Mathew et al.
patent: 7112490 (2006-09-01), Hong et al.
patent: 7122432 (2006-10-01), Shimizu et al.
patent: 7196935 (2007-03-01), Forbes
patent: 7199419 (2007-04-01), Haller
patent: 7220634 (2007-05-01), Prall et al.
patent: 7259984 (2007-08-01), Kan et al.
patent: 7371642 (2008-05-01), Forbes
patent: 2002/0151136 (2002-10-01), Lin et al.
patent: 2003/0068864 (2003-04-01), Il-Yong et al.
patent: 2004/0000688 (2004-01-01), Harari et al.
patent: 2004/0248371 (2004-12-01), Wang
patent: 2005/0037576 (2005-02-01), Chen et al.
patent: 2005/0146938 (2005-07-01), Forbes
patent: 2005/0148173 (2005-07-01), Shone
patent: 2005/0242391 (2005-11-01), She et al.
patent: 2005/0280089 (2005-12-01), Forbes
patent: 2005/0280094 (2005-12-01), Forbes
patent: 2006/0011966 (2006-01-01), Wang
patent: 2006/0046383 (2006-03-01), Chen et al.
patent: 2006/0131640 (2006-06-01), Yu et al.
patent: 2006/0152978 (2006-07-01), Forbes
patent: 2006/0166443 (2006-07-01), Forbes
Actions on the Merits by U.S.P.T.O, as of Jul. 26, 2007, 8 pages.
U.S. Appl. No. 11/626,762, filed Jan. 24, 2007.
U.S. Appl. No. 11/626,753, filed Jan. 24, 2007.
U.S. Appl. No. 11/626,768, filed Jan. 24, 2007.
Guan, H., et al. “An Analytical Model for Optimization of Programming Efficiency and Uniformity of Split Gate Source-Side Injection Superflash Memory,” IEEE Transactions on Electron Devices, vol. 50, No. 3, pp. 809-815, Mar. 2003.
Hayashi, Y., et al. “Twin MONOS Cell with Dual Control Gates,” 2000 Symposium on VLSI Technology Digest of Technical Papers, pp. 122-123, 2000.
Lee, D., et al. “Vertical Floating-Gate 4.5F2 Split-Gate NOR Flash Memory at 110nm Node,” 2004 Symposium on VLSI Technology Digest of Technical Papers, pp. 72-73, 2004.
Ma, Y. et al. “A Dual-Bit Split-Gate EEPROM (DSG) Cell in Contactless Array for Single-Vcc High Density Flash Memories,” IEDM, p. 57-60, 1994.
Osabe, T. et al. “Charge-Injection Length in Silicon Nanocrystal Memory Cells,” 2004 Symposium on VLSI Technology Digest of Technical Papers p. 242-243, 2004.
Van Houdt, J., et al. “An Analytical Model for the Optimization of Source-Side Injection Flash EEPROM Devices,” IEEE Transactions on Electron Devices, vol. 42, No. 7, pp. 1314-1320, Jul. 1995.
U.S. Appl. No. 10/961,295, filed Oct. 8, 2004.
U.S. Appl. No. 11/079,674, filed Mar. 14, 2005.
U.S. Appl. No. 11/188,585, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,935, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,584, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,999, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,953, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,898, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,910, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,909, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,591, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,939, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,588, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,603, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,615, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,582, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,583, filed Jul. 25, 2005.
U.S. Appl. No. 11/834,391, filed Aug. 6, 2007.
Actions on the Merits by U.S.P.T.O, as of Nov. 8, 2007, 10 pgs.
Actions on the Merits by U.S.P.T.O, as of Apr. 16, 2008, 12 pgs.
Yang, Edward S., “8-3 Channel Conductance”, Fundamentals of Semiconductor Devices, McGraw-Hill Book Company, p. 205, 1978.
Actions on the Merits by U.S.P.T.O, as of Jul. 25, 2008, 13 pgs.
Hong Cheong M.
Li Chi-Nan
Freescale Semiconductor Inc.
Tran Long K
LandOfFree
Hot carrier injection programmable structure including... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hot carrier injection programmable structure including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hot carrier injection programmable structure including... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4038725