Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-10-18
1997-01-21
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257325, 257411, 257635, 257639, H01L 2976
Patent
active
055962181
ABSTRACT:
A CMOS device is provided having a high concentration of nitrogen atoms at the SiO.sub.2 /Si interface reducing hot carrier effects associated with operating shorter devices at voltage levels typically used with longer devices. In one embodiment, the process for providing the CMOS device resistant to hot carrier effects makes use of a sacrificial oxide layer through which the nitrogen atoms are implanted and is then removed. Following removal of the sacrificial oxide layer, a gate oxide is grown giving a CMOS device having high nitrogen concentration at the SiO.sub.2 /Si interface. In an alternate embodiment, nitrogen atoms are implanted through the final gate oxide using an implantation energy which does not damage the oxide layer.
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Doyle Brian
Philipossian Ara
Soleimani Hamid R.
Carroll J.
Digital Equipment Corporation
Fisher Arthur W.
Maloney Denis G.
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