Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-11
2006-07-11
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S208000
Reexamination Certificate
active
07075159
ABSTRACT:
This invention provides a horizontal MOS transistor capable of improving current drivability and reducing ON resistance by optimizing the gate wiring structure and the disposition structure of source/drain layers. First gate wirings are disposed in the X direction at a pitch Y1in the Y direction and second gate wirings12are disposed in the Y direction with two pieces as a pair such that they meander at a pitch X1in the X direction. The meandering of the second gate wiring12is formed so as to sandwich the bent portions14substantially in the center of the pitch Y1. A bottle-like shape diffusion layer region in which the wide-width region and narrow-width region are combined is sectioned by adjacent first and second wirings. A contact16for connecting the diffusion layer region to the wiring layer18is disposed in the wide-width region and wiring layers18are disposed such that two rows run in parallel in the X direction. A diffusion layer region is a different electrode region from diffusion layer regions adjacent on four sides thereby forming a MOS transistor. Consequently, a horizontal MOS transistor excellent in current drivability for each unit region and having a slight ON resistance is constructed.
REFERENCES:
patent: 5239196 (1993-08-01), Ikeda et al.
patent: 6522004 (2003-02-01), Higuchi
patent: 2002/0024856 (2002-02-01), Kumagai et al.
patent: 09-129867 (1997-05-01), None
Kawai Takumi
Suga Shinichiro
Ngo Ngan V.
Westerman Hattori Daniels & Adrian LLP
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