Horizontal MOS transistor

Details Horizontal MOS transistor Horizontal MOS transistor

2005-12-06

2005-12-06

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S343000

Reexamination Certificate

active

06972458

ABSTRACT:
A semiconductor device includes a base P region, a source N+region, and a drain N+region formed in a surface layer portion on a principal surface in an N−silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+region in a region including the drain N+region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+region from the source N+region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.

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