Horizontal field effect transistor and method of manufacturing t

Details Horizontal field effect transistor and method of manufacturing t Horizontal field effect transistor and method of manufacturing t

1997-03-21

1999-11-09

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257343, H01L 2976, H01L 2994, H01L 31062

Patent

active

059819979

ABSTRACT:
The present invention relates to a horizontal field effect transistor including a semiconductor substrate of a first conductivity type, a well region of a second conductivity type formed in a surface layer of the substrate, a source region of the first conductivity type formed in the well region, a drain region of the first conductivity type formed in the well region separated from the source region, a gate electrode disposed via a gate insulating film on a top surface of the substrate between the source region and the drain region, a source electrode disposed to contact a surface of the source region, a drain electrode disposed to contact a surface of the drain region, and a first and second offset region of the first conductivity type formed to contact the drain region, wherein an end of the first offset region and an end of the second offset region, close to the source region, are offset from each other.

REFERENCES:
patent: 4712124 (1987-12-01), Stupp

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