Homoepitaxial growth of Alpha-SiC thin films and semiconductor d

Details Homoepitaxial growth of Alpha-SiC thin films and semiconductor d Homoepitaxial growth of Alpha-SiC thin films and semiconductor d

1989-10-16

1991-04-30

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

With contiguous layer doped to degeneracy

148 33, 148DIG148, 156612, 156DIG64, 437105, 437106, 427429, H01L 2120, H01L 21203

Patent

active

050115499

ABSTRACT:
Device quality monocrystalline Alpha-SiC thin films are epitaxially grown by chemical vapor deposition on Alpha-SiC [0001] substrates prepared off axis.

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