Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-05-30
2006-05-30
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S086000, C257S094000, C257S103000
Reexamination Certificate
active
07053413
ABSTRACT:
A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cm−1at wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 104per cm2and an optical absorption coefficient below about 100 cm−1at wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.
REFERENCES:
patent: 5770887 (1998-06-01), Tadatomo et al.
patent: 5810925 (1998-09-01), Tadatomo et al.
patent: 6140669 (2000-10-01), Lozykowski et al.
patent: 6181721 (2001-01-01), Geels et al.
patent: 6225650 (2001-05-01), Tadatomo et al.
patent: 6255669 (2001-07-01), Birkhahn et al.
patent: 6294440 (2001-09-01), Tsuda et al.
patent: 6413627 (2002-07-01), Motoki et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 6686691 (2004-02-01), Mueller et al.
patent: 2004/0124434 (2004-07-01), D'Evelyn et al.
patent: WO0124285 (2001-04-01), None
patent: WO00137351 (2001-05-01), None
F. Bertram et al., American Institute of Physics, Applied Physics Letters, “Strain Relaxation and Strong Impurity Incorporation in Epitaxial Laterally Overgrown GaN: Direct Imaging of Different Growth Domains By Cathodoluminescence Microscopy and Micro-Raman Spectroscopy”, vol. 74, No. 3, pp. 359-361, Jun. 26, 2000.
P. Fini et al., American Institute of Physics, Applied Physics Letters, “In Situ, Real-Time Measurement of Wing Tilt During Lateral Epitaxial Overgrowth of GaN”, vol. 76, No. 26, pp. 3893-3895, Jun. 26, 2000.
P. Fini et al., Journal of Crystal Growth,Determination of Tilt in the Lateral Epitaxial Overgrowth of GaN Using X-Ray Diffraction, vol. 209, pp. 581-590, 2000.
Yoshiaki Honda et al., Japan Journal of Applied Physics, “Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves”, vol. 38, Part 2, No. 11B, pp. L1299-L1302, Nov. 15, 1999.
K. Horibuchi et al., Threading Disclocations in SAG-GaN, Phys. Stat. Sol., “Behavior of Treading Dislocations in SAG-GaN Grown by MOVPE”, 180, pp. 171-175, 2000.
Ig-Hyeon Kim et al., American Institute of Physics, Applied Physics Letters, “Crystal Tilting in GaN Grown By Pendoepitaxy Method on Sapphire Substrate”, vol. 75, No. 26, pp. 4109-4111, Dec. 27, 1999.
TS Kuan et al., Department of Physics, University at Albany, State University of New York, Albany, NY 12222, “Dislocation Mechanisms In The GaN Lateral Overgrowth By Hydride Vapor Phase Epitaxy”, F99W2.6, pp. 1-6.
H. Marchand et al., American Institute of Physics, Applied Physics Letters, “Microstructure of GaN Latgerally Overgrown By Metalorganic Chemical Vapor Deposition”, vol. 73, No. 6, pp. 747-749, Aug. 10, 1998.
Akira Sakai et al., American Institute of Physics, Applied Physics Letters, “Transmission Electron Microscopy of Defects In GaN Films Formed By Epitaxial Lateral Overgrowth”, vol. 73, No. 4, pp. 481-483, Jul. 27, 1998.
YH Song et al., Phys. Stat. Sol.,Lateral Epitaxial Overgrowth of GaN and Its Crystallographic Tilt Depending On The Growth Condition, 180, pp. 247-250, 2000.
S. Tomiya et al., American Institute of Physics, Applied Physics Letters, “Dependence of Crystallographic Tilt and Defect Distribution On Mask Material In Epitaxial Lateral Overgrown GaN Layers”, vol. 77, No. 5, pp. 636-638, Jul. 31, 2000.
Chris G. Van de Walle, The American Physical Society, Rapid Communications, Physical Review B, “Interactions of Hydrogen With Native Defects in GaN”, vol. 56, No. 16, pp. R10 020-R10 023, Oct. 15, 1997.
Marcie G. Weinstein et al., American Institute of Physics, Applied Physics Letters, “Hydrogen-Decorated Lattice Defects in Proton Implanted GaN”, vol. 72, No. 14, pp. 1703-1705, Apr. 6, 1998.
R. P. Vaudo et al., Phys. Stat. Sol. (a) “GaN Boule Growth: A Pathway to GaN Wafers With Improved Material Quality”, vol. 194, No. 2, pp. 494-497, 2000.
A. Yasan et al., American Institute of Physics, Applied Physics Letters, “Comparison of Ultraviolet Light-Emitting Diodes With Peak Emission at 340 nm Grown on GaN Substrate and Sapphire”, vol. 81, No. 12, pp. 2151-2153, Sep. 16, 2002.
Arthur Pelzmann et al., Elsevier Science Bl.V., Journal of Crystal Growth, “Blue Light-Emitting Diodes on GaN Substrates, Growth and Characterization”, vol. 189/190, pp. 167-171, 1998.
I. Grzegory et al., Acta Physica Polonica A, High Pressure Research Center, Polish Academy of Sciences, UNIPRESS, Sokolowska 29/37, 01-142 Warsaw, Poland, “Blue Laser on High N2 Pressure-Grown Bulk GaN”, vol. 100, pp. 229-232, 2001.
P. Prystawko et al., Phys. Stat. Sol. (a) “Blue-Laser Structures Grown on Bulk GaN Crystals”, vol. 192, No. 2, pp. 320-324, 2002.
M. Kamp et al., “GaN Homoepitaxy for Device Applications”, Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G10.2, High Pressure Research Center, Warsaw, Poland, 1999.
S. Porowski et al., Acta Physica Polonica A, High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, “High Resistivity GaN Single Crystalline Substrates”, vol. 92, No. 5, pp. 958-962, 1997.
J. I. Pankove et al., American Institute of Physics, Applied Physics Letters, “Molecular Doping of Gallium Nitride”, vol. 74, No. 3, pp. 416-418, Jan. 18, 1999.
U.S. Appl. No. 09/683,659, filed Jan. 31, 2002.
U.S. Appl. No. 09/683,658, filed Jan. 31, 2002.
U.S. Appl. No. 10/693,126, filed Oct. 24, 2003.
U.S. Appl. No. 10/329,981, filed Dec. 27, 2002.
U.S. Appl. No. 10/686,136, filed Oct. 15, 2003.
Cao Xian-An
D'Evelyn Mark Philip
Evers Nicole Andrea
LeBoeuf Steven Francis
Zhang An-Ping
Cabou Christian G.
General Electric Company
Louie Wai-Sing
Powell, III William E.
LandOfFree
Homoepitaxial gallium-nitride-based light emitting device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Homoepitaxial gallium-nitride-based light emitting device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Homoepitaxial gallium-nitride-based light emitting device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3608598