Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2007-06-26
2007-06-26
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192150, C204S192220, C204S192230, C204S298070, C204S298120, C204S298180
Reexamination Certificate
active
10635344
ABSTRACT:
The present invention provides an improved hollow cathode method for sputter coating a substrate. The method of the invention comprises providing a channel for gas to flow through, the channel defined by a channel defining surface wherein one or more portions of the channel-defining surface include at least one target material. Gas is flowed through the channel wherein at least a portion of the gas is a non-laminarly flowing gas. While the gas is flowing through the channel a plasma is generated causing target material to be sputtered off the channel-defining surface to form a gaseous mixture containing target atoms that is transported to the substrate. In an important application of the present invention, a method for forming oxide films and in particular zinc oxide films is provided.
REFERENCES:
patent: 5810982 (1998-09-01), Sellers
patent: 5889295 (1999-03-01), Rennie et al.
patent: 6150030 (2000-11-01), Stollenwerk et al.
patent: 6156172 (2000-12-01), Kadokura
patent: 6337001 (2002-01-01), Haag et al.
patent: 6458253 (2002-10-01), Ando et al.
patent: 42 35 953 (1994-04-01), None
Vossen et al., “Thin Film Processes”, p. 48-49 (1978).
“Deposition Schemes for Low Cost Transparent Conductors for Photovoltaics”, A. E. Delahoy & M. Cherny, Mat. Res. Symp. Proc., vol. 426, 1996, pp. 467-477.
“High-Rate Low Kinetic Energy Gas-Flow-Sputtering System”, K. Ishii, J. Vac. Sci. Technol. A, vol. 7, No. 2, 1989, pp. 256-258.
“Hollow Cathode Discharge Sputtering Device for Uniform Large Area Thin Film Deposition”, H. Koch, J. Vac. Sci. Technol. A., vol. 9, No. 4, 1991, pp. 2374-2377.
“Zirconia Thin Film Deposition on Silicon by Reactive Gas Flow Sputtering: The Influence of Low Energy Particle Bombardment”, T. Jung & A. Westphal, Mater. Sci. Eng., A140, 1991, pp. 528-533.
“High Rate Deposition of Alumina Films by Reactive Gas Flow Sputtering”, T. Jung & A. Westphal, Surf. Coat. Technol., 59, 1993, pp. 171-176.
“Gas Flow Sputtering of Oxide Coatings: Practical Aspects of the Process”, Th. Jung, T. Kälber, V.v.d. Heide, Surf. Coat. Technol., 86-87, 1996, pp. 218-224.
“New DC Sputter Sources for the Large Scale Deposition of Oxide Films”, M. Hö{umlaut over ( )}fer, A. Jung, T. Jung, H.-U. Kricheldorf & F. Schmidt, Proc. 43rdSVC Annual Tech. Conf., 2000, pp. 287-292.
Delahoy Alan E.
Guo Sheyu
Brooks & Kushman P.C.
Energy Photovoltaics, Inc.
McDonald Rodney G.
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