Hollow cathode plasma assisted apparatus and method of diamond s

Details Hollow cathode plasma assisted apparatus and method of diamond s Hollow cathode plasma assisted apparatus and method of diamond s

1987-07-02

1989-05-16

Bueker, Richard

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156614, 156DIG68, 427 39, 427 42, 118723, 423446, C23C 1600

Patent

active

048307025

ABSTRACT:
The present invention includes an apparatus and method for depositing diamond on a substrate. A hydrocarbon/hydrogen gas mixture is passed through a refractory metal hollow cathode which is self heated to a high temperature. The gas mixture is dissociated by a combination of thermal and plasma effects. The plasma plume emanating from the hollow cathode heats the substrate which is positioned on a surface of the anode. Growth of the diamond film is enhanced by bombardment of electrons.

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patent: 4440108 (1984-04-01), Little
patent: 4490229 (1984-12-01), Mirtich
patent: 4593644 (1986-06-01), Hanak
K. Suzuki, "Growth of Diamond Thin Films by DC Plasma Chemical Vapor Deposition", Appl. Phys. Lett. 50 (12), American Institute of Physics, Mar. 23, 1987, pp. 728 and 729.

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