Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-22
1999-11-23
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257315, 257316, 257318, 257321, 257322, 257326, 257391, H01L 2976
Patent
active
059905123
ABSTRACT:
Hot-electron injection driven by a hole impact ionization mechanism at the channel-drain junction provides a new method of hot electron injection. Using this mechanism, a four-terminal pFET floating-gate silicon MOS transistor for analog learning applications provides nonvolatile memory storage. Electron tunneling permits bidirectional memory updates. Because these updates depend on both the stored memory value and the transistor terminal voltages, the synapses can implement a learning function. The synapse learning follows a simple power law. Unlike conventional EEPROMs, the synapses allow simultaneous memory reading and writing. Synapse transistor arrays can therefore compute both the array output, and local memory updates, in parallel. Synaptic arrays employing these devices enjoy write and erase isolation between array synapses is better than 0.01% because the tunneling and injection processes are exponential in the transistor terminal voltages. The synapses are small, and typically are operated at subthreshold current levels.
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Diorio Christopher J.
Hasler Paul E.
Mead Carver A.
Minch Bradley A.
California Institute of Technology
Mintel William
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