Metal working – Barrier layer or semiconductor device making
Patent
1991-11-29
1993-11-02
Hearn, Brian E.
Metal working
Barrier layer or semiconductor device making
29 2507, 29 2503, 118500, B05B 1300
Patent
active
052580474
ABSTRACT:
A device for holding an object by electrostatic force includes a body made of a dielectric of a low resistivity, such as SiC, and an electrode provided on that surface of the device body facing away from a holder surface, so that a potential difference is produced between the object and the holder surface. A change-over switch for grounding the device body to an earth potential of an ambient environment is provided, so that the dielectric can be rapidly brought into a potential equal to the earth potential.
REFERENCES:
patent: 4817556 (1989-04-01), Mears et al.
patent: 4897171 (1990-01-01), Ohmi
Inouye Hiroshi
Kitsunai Hiroyuki
Tokisue Hiromitsu
Tsumaki Nobuo
Hearn Brian E.
Hitachi , Ltd.
Picardat Kevin M.
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