Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2008-05-12
2010-02-16
Tran, Minh-Loan T (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C257SE29246, C257SE29249, C257SE21403, C257SE21407
Reexamination Certificate
active
07662682
ABSTRACT:
A method for epitaxial growth of Group III nitrides on a substrate using source gases consistent with metal organic chemical vapor deposition is provided. A heterostructure formed from two Group III nitride epitaxial layers is grown on a substrate in an atmosphere containing minimal hydrogen. The two Group III nitride epitaxial layers differ sufficiently in composition from one another in order to generate a two-dimensional electron gas at their interface. The substrate upon which the heterostructure is grown has a diameter of at least 100 mm.
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Hutchins Edward Lloyd
Saxler Adam William
Cree Inc.
Summa, Additon & Ashe, P.A.
Tran Minh-Loan T
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