Highly stable asymmetric SRAM cell

Details Highly stable asymmetric SRAM cell Highly stable asymmetric SRAM cell

1993-06-01

1994-11-08

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Flip-flop

365181, 36518907, G11C 1300

Patent

active

053633288

ABSTRACT:
An asymmetric static random access memory cell (50 and 53) includes polysilicon load elements (55 and 56), N-channel pull-down transistors (57 and 58), and N-channel coupling transistors (59 and 60). One of the coupling transistors (59 and 81) has a channel width that is less than the channel width of the other coupling transistor (60 and 80). The asymmetric cells (50 and 53) are located close to power supply voltage terminal V.sub.SS, while conventional symmetrical cells (51 and 52) are located apart from the power supply voltage terminal V.sub.SS. The asymmetric cells (50 and 53) correct an imbalance in the ground path caused by a parasitic resistance (83 and 86) of a diffusion layer (94) that is used to couple the asymmetric cells (50 and 53) to ground potential. The asymmetric cell (50 and 53) improves cell stability without degrading performance or increasing cell area.

REFERENCES:
patent: 4590508 (1986-05-01), Hirakawa et al.
patent: 4879690 (1989-11-01), Anami et al.
patent: 5020029 (1991-05-01), Ichinose et al.
patent: 5134581 (1992-07-01), Ishibashi et al.
patent: 5153852 (1992-10-01), Terrell
patent: 5267192 (1992-11-01), Nogami
Kuriyama et al., "An Asymmetric Memory Cell using a C-TFT for ULSI SRAMS", 1992 Symposium on VLSI Technology Digest of Tech. Papers, pp. 38, 39.
Chappell et al., "Stability and SER Analysis of Static RAM Cells", IEEE Transactions on Electron Devices, ED-32, No. 2, Feb. 1985, pp. 463-470.

Affiliated with

Also associated with

Rating

Highly stable asymmetric SRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Highly stable asymmetric SRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly stable asymmetric SRAM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1788203