Highly selective silicon oxide etching compositions

Details Highly selective silicon oxide etching compositions Highly selective silicon oxide etching compositions

2007-03-20

2007-03-20

Quach, T. N. (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S745000, C438S756000, C252S079300

Reexamination Certificate

active

10817563

ABSTRACT:
Silicon oxide etching solutions containing the product of at least one bifluoride source compound dissolved in a solvent consisting of at least one carboxylic acid, and further comprising from about 0.5 to about 3 percent by solution weight of hydrofluoric acid and from about 1 to about 5 percent by solution weight of water, wherein the total concentration of bifluoride source compound is between about 1.25 and about 5.0 moles per kilogram of solvent. Methods for selectively removing silicon oxides and metal silicates from metal surfaces are also disclosed.

REFERENCES:
patent: 5277835 (1994-01-01), Ohmi et al.
patent: 5496485 (1996-03-01), Maternaghan
patent: 5824601 (1998-10-01), Dao et al.
patent: 6117796 (2000-09-01), Gale et al.
patent: 6150282 (2000-11-01), Rath et al.
patent: 6192488 (2001-02-01), Li
patent: 6192899 (2001-02-01), Li et al.
patent: 6200891 (2001-03-01), Jagannathan et al.
patent: 6254796 (2001-07-01), Rath et al.
patent: 2002/0037820 (2002-03-01), Small et al.
patent: 2003/0235986 (2003-12-01), Sievert et al.
patent: 2004/0250835 (2004-12-01), Yates
patent: 1 228 083 (1971-04-01), None
patent: 59184532 (1984-10-01), None
patent: 02216126 (1990-08-01), None
patent: 10036140 (1998-02-01), None
patent: WO 00/58208 (2000-05-01), None

Affiliated with

Also associated with

Rating

Highly selective silicon oxide etching compositions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Highly selective silicon oxide etching compositions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly selective silicon oxide etching compositions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3784465