Stock material or miscellaneous articles – Composite – Of silicon containing
Patent
1997-02-12
1998-05-26
Zitomer, Fred
Stock material or miscellaneous articles
Composite
Of silicon containing
1566431, 1566461, 1566501, 1566511, 1566531, 1566621, 1566251, 428698, 428938, H01L 21306
Patent
active
057562164
ABSTRACT:
A method is provided for forming a nitride spacer, in which a layer of oxide is grown superjacent a substrate and the semiconductor features disposed thereon. A layer of nitride is deposited superjacent the oxide layer, and a major horizontal portion of the nitride layer anisotropically etched with an ionized fluorocarbon compound. The remainder of the horizontal portion of the nitride layer is removed with NF.sub.3 ions in combination with ionized halogen-containing compound, thereby creating nitride spacers adjacent the features.
REFERENCES:
patent: 4568410 (1986-02-01), Thornquist
patent: 4793897 (1988-12-01), Dunfield et al.
patent: 5338395 (1994-08-01), Keller et al.
patent: 5374585 (1994-12-01), Smith et al.
"Thin Film Investigations and Sputter Etchng"-Emmoth et al; Annual Report-Res. Inst. Phys. (Swed) 1979; abstract only.
"Highly Selective Etching of Silicon Nitride (Si.sub.3 N.sub.4) to Silicon Dioxide Employing Fluorine and Chlorine Atoms Generated by Microwave Discharge"-J. Electrochem. Soc; vol. 136, No. 7; 7-89; pp. 2032-2034 Suto et al.
"Selective Etching of Silicon Nitride Using Remote Plasmas of CF4 and SF6" J. Vac. Sci., A. vol. 7 No. 3, pt. 1; Loewenstein 5-89; abstract only.
Becker David S.
Keller David J.
Micro)n Technology, Inc.
Zitomer Fred
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