Highly selective nitride spacer etch

Stock material or miscellaneous articles – Composite – Of silicon containing

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1566431, 1566461, 1566501, 1566511, 1566531, 1566621, 1566251, 428698, 428938, H01L 21306

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057562164

ABSTRACT:
A method is provided for forming a nitride spacer, in which a layer of oxide is grown superjacent a substrate and the semiconductor features disposed thereon. A layer of nitride is deposited superjacent the oxide layer, and a major horizontal portion of the nitride layer anisotropically etched with an ionized fluorocarbon compound. The remainder of the horizontal portion of the nitride layer is removed with NF.sub.3 ions in combination with ionized halogen-containing compound, thereby creating nitride spacers adjacent the features.

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patent: 4568410 (1986-02-01), Thornquist
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patent: 5338395 (1994-08-01), Keller et al.
patent: 5374585 (1994-12-01), Smith et al.
"Thin Film Investigations and Sputter Etchng"-Emmoth et al; Annual Report-Res. Inst. Phys. (Swed) 1979; abstract only.
"Highly Selective Etching of Silicon Nitride (Si.sub.3 N.sub.4) to Silicon Dioxide Employing Fluorine and Chlorine Atoms Generated by Microwave Discharge"-J. Electrochem. Soc; vol. 136, No. 7; 7-89; pp. 2032-2034 Suto et al.
"Selective Etching of Silicon Nitride Using Remote Plasmas of CF4 and SF6" J. Vac. Sci., A. vol. 7 No. 3, pt. 1; Loewenstein 5-89; abstract only.

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