Highly selective nitride spacer etch

Details Highly selective nitride spacer etch Highly selective nitride spacer etch

1994-09-07

1997-12-23

Clark, W. Robinson H.

Stock material or miscellaneous articles

Composite

Of silicon containing

428697, 428938, 156643, 156650, 156651, 156652, 156653, H01L 21306

Patent

active

057005800

ABSTRACT:
A method is provided for forming a nitride spacer, in which a layer of oxide is grown superjacent a substrate and the semiconductor features disposed thereon. A layer of nitride is deposited superjacent the oxide layer, and a major horizontal portion of the nitride layer anisotropically etched with an ionized fluorocarbon compound. The remainder of the horizontal portion of the nitride layer is removed with NF.sub.3 ions in combination with ionized halogen-containing compound, thereby creating nitride spacers adjacent the features.

REFERENCES:
patent: 5338395 (1994-08-01), Keller et al.
patent: 5374585 (1994-12-01), Smith et al.

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